生產(chǎn)廠商：HQ Graphene

產(chǎn)品信息

Hexagonal boron nitride is a semiconductor with a direct band gap of ~5.9 eV and has been used extensively as an insulator for the production of ultrahigh mobility 2D heterostructures composed of various types of 2D semiconductors. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers, down to monolayer h-BN. 

The h-BN crystals from HQ Graphene have a typical lateral size of ~0.1 cm and are transparent. The monocrystalline h-BN is an excellent insulator which is represented by its very large breakdown voltage (>0.4 V/nm). Large area size h-BN single crystals can be can be exfoliated onto a substrate (eg. SiO2, quartz, polymer, etc). Sizes range up to ~100 μm for crystals with a thickness of a few tens on nm thick.

六方氮化硼晶體（5片裝） hBN(Hexagonal Boron Nitride)-Crystal
晶體尺寸：~1mm
電學(xué)性能：絕緣體/半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：A級(jí)

圖片標(biāo)題

X-ray diffraction on a hexagonal boron nitride single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3

Raman spectrum of a single crystal hexagonal boron nitride (h-BN). Measurement was performed with a 785nm Raman system at room temperature.