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我司常期備有NCE65T540F TO220F大量庫(kù)存，保證原裝品質(zhì)，假一賠萬(wàn)。歡迎前來(lái)洽談合作。

NCE65T540F

N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS）

Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T540D NCE65T540 NCE65T540F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V) AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 8 8* A Continuous Drain Current at Tc=100°C ID (DC) 5.2 5.2* A Pulsed drain current (Note 1) IDM (pluse) 32 32* A Maximum Power Dissipation(Tc=25℃) Derate above 25°C PD 69 0.55 31.6 0.25 W W/°C Single pulse avalanche energy (Note 2) EAS 156 mJ Avalanche current(Note 1) IAR 1.7 A Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 0.3 mJ

NCE65T540F

Parameter Symbol NCE65T540D

NCE65T540 NCE65T540F Unit

Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns

Reverse diode dv/dt，VDS ≤480 V,ISD<ID dv/dt 15 V/ns

Operating Junction and Storage Temperature Range TJ,TSTG -55...+150 °C

* limited by maximum junction temperature

Table 2. Thermal Characteristic

Parameter Symbol NCE65T540D

NCE65T540 NCE65T540F Unit

Thermal Resistance，Junction-to-Case（Maximum） RthJC 1.81 3.95 °C /W

Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 62 80 °C /W

NCE65T540F

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 650 V Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=650V,VGS=0V 1 μA Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=650V,VGS=0V 100 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A 460 540 mΩ Dynamic Characteristics Input Capacitance Clss VDS=50V,VGS=0V, F=1.0MHz 590 pF Output Capacitance Coss 37 pF Reverse Transfer Capacitance Crss 0.9 pF Total Gate Charge Qg VDS=480V,ID=8A, VGS=10V 14.6 22 nC Gate-Source Charge Qgs 4 nC Gate-Drain Charge Qgd 6.7 nC Switching times Turn-on Delay Time td(on) VDD=380V,ID=4A, RG=4.7Ω,VGS=10V 8 nS Turn-on Rise Time tr 6 nS Turn-Off Delay Time td(off) 59 75 nS Turn-Off Fall Time tf 10 15 nS Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD TC=25°C 8 A Pulsed Source-drain current(Body Diode) ISDM 32 A Forward On Voltage VSD Tj=25°C,ISD=8A,VGS=0V 0.9 1.2 V Reverse Recovery Time trr Tj=25°C,IF=4A,di/dt=100A/μs 230 nS Reverse Recovery Charge Qrr 1.2 uC Peak Reverse Recovery Current Irrm 10.5 A Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω