深圳黃金樹科技有限公司代理國內MOSFET，IC 集成電路，橋堆 二三極管 可控硅等電子產品， 產品主要應用于UPS、EPS、逆變電源、工業(yè)控制板、變頻電源、開關電源、電力操作電源、小家電，新能源，汽車電子等高科技行業(yè)，并致力于推廣供應環(huán)保無鉛的綠色產品。 我們本著“誠信經營，互惠互贏”的理念貫穿供應，銷售，服務的始終。我們始終將“創(chuàng)新，進取，誠信合作，品質，客戶，服務至上”作為商務合作發(fā)展的基石，愿我們持續(xù)，共同發(fā)展！深圳黃金樹科技有限公司是知名的電子元器件混合分銷商，成立于深圳龍華區(qū)，主要產品有SPM、IG、MOSFET、FRD(快恢復）、可控硅、光耦、IC、MCU等。代理品牌有：無錫新潔能（NCE)，江蘇捷捷微（JJM),福斯特（FIRST),臺灣博盛（POTENS)，優(yōu)勢現貨品牌有UTC友順，安森美(ON)，英飛凌(Infineon) ,NXP,ADI,RICHTEK,TI等。
本公司長期備有 臺灣UTC全線產品。保證原廠原裝現貨庫存，MPSA92L量大單價優(yōu)勢出貨，聯系電話：13510537787何
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MPSA92/93 PNP SILICON TRANSISTOR 2019 Unisonic Technologies Co., Ltd QW-R201-019.L HIGH VOLTAGE PNP TRANSISTOR ? DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. ? FEATURES * High Collector-Emitter voltage: VCEO=-300V (UTC MPSA92) VCEO=-200V (UTC MPSA93) * Collector Dissipation: PC (max.)=625mW
MPSA92/93 PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO (TA=25°С unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT MPSA92 -300 V Collector-Base Voltage MPSA93 VCBO -200 V MPSA92 -300 V Collector-Emitter Voltage MPSA93 VCEO -200 V Emitter-Base Voltage VEBO -5 V Base Current IB -100 mA Collector Current IC -500 mA SOT-89 0.5 W TO-252 1.1 W TO-126 1 W Collector Dissipation TO-92/TO-92NL PC 0.62 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ? THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT SOT-89 250 °C/W TO-252 110 °C/W TO-126 125 °C/W Junction to Ambient TO-92/TO-92NL θJA 200 °C/W SOT-89 43 °C/W TO-252 8.3 °C/W TO-126 12.5 °C/W Junction to Case TO-92/TO-92NL θJC 83.3 °C/W ? ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown MPSA92 -300 V Voltage MPSA93 BVCBO IC=-100μA, IE=0 -200 V Collector-Emitter Breakdown MPSA92 -300 V Voltage MPSA93 BVCEO IC=-1mA, IB=0 -200 V Emitter-Base Breakdown Voltage BVEBO IE=-100μA, IC=0 -5 V MPSA92 -0.25 μA Collector Cut-Off Current MPSA93 ICBO VCB=-200V, IE=0 -0.25 μA Emitter Cut-Off Current IEBO VEB=-3V, IC=0 -0.10 μA ON CHARACTERISTICS 60 DC Current Gain(note) hFE 80 VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA 80 Collector-Emitter Saturation Voltage VCE(SAT) IC=-20mA, IB=-2mA -0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=-20mA, IB=-2mA -0.90 V SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product fT VCE=-20V, IC=-10mA, f=100MHz 50 MHz MPSA92 6 pF Output Capacitance MPSA93 Cob VCB=-20V, IE=0, f=1MHz 8 pF Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE(SAT)<200mV
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